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A Nanometric Analysis of Surface Textured Multicrystalline Silicon Solar Cells by AFM

Rakesh Mohan Pujahari1, Munesh Chandra Adhikary2 and Sanjit Kumar Ratha2

1. ABES Institute of Technology, Ghaziabad, Uttar Pradesh, India

2. Postgraduate Department of Applied Physics and Ballistics, Fakir Mohan University, Balasore, Odisha, India


Abstract: Texturization process using a combination of sodium hydroxide (NaOH) and sodium hypochlorite (NaOCl) solution at elevated but controlled temperature is an easy, low cost and convenient option for any photovoltaic industry. The grain boundary smoothening throughout the large area multicrystalline silicon (mc-Si) solar cell surface by texturization process optimization enhances cell efficiency. Low cost with better power output is the ultimate target for every available process. In our present study atomic force microscope is used to observe their intragrain surface in a miniscule area of 3 μm × 3 μm. This AFM study of surface roughness gives a comprehensive idea of surface by the three dimensional analysis, roughness analysis and section analysis both qualitatively and quantitatively. Based on this study of surface morphology, the texturization process is optimized to ensure better cell efficiency with a minimum value of series resistance and a higher value of shunt resistance for the photovoltaic cell.

Key words: Multicrystalline silicon solar cell texturization, AFM roughness analysis, cell LIV and DIV characteristics.
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